Observe here that the circuit elements associated with Q4 in the totem-pole circuit are missing and the collector of Q3 is left open-circuited, hence the name open-collector.
These are nearly a buck a pop, but you can drive big long series strings with them, theyre rated at up to 50v. This chip also has an Output Enable pin, so you dont even need an external mosfet. Additionally, it protects the GaN switch against spurious turn-on, even for the first pulse or after a burst mode operation. The totem pole circuit introduced in the second section can also speed up the turn-off. For a beefier, single chip option, the AMC7140 is adjustable up to 700ma by using an external current setting resistor.
Infineon’s isolated EiceDRIVER™ GaN gate driver ICs provide negative V GS voltage, which leads to safe off-states during switching transients.
The high-side EiceDRIVER™ GaN gate drivers ensure robust and highly efficient operation of the high-voltage gallium-nitride switch, and at the same time concurrently minimizing R&D efforts and shortening time-to-market. Thanks to the extended common-mode transient immunity (CMTI) robustness, these gate drivers enable extremely fast switching. Key advantages when designing with Infineon’s tailor-made EiceDRIVER™ GaN gate driver ICs are the fast turn-on and turn-off switch slew rates in source and sink driving currents. The single-channel isolated EiceDRIVER™ GaN gate driver IC family for high-voltage gallium nitride switches was developed to drive Infineon’s CoolGaN™ 600V e-mode HEMTs, allowing for higher system efficiency and power density, associated with improved robustness and reduced costs.